| PART |
Description |
Maker |
| 63S281 |
High Performance 256 x 8 PROM TiW PROM
|
AMD
|
| CY7C251 7C251 CY7C254 |
16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率转换可重复编程的PROM) 16K的8电源开关和可再编程胎膜早破6K的8功率转换和可重复编程的可编程
16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率转换可重复编程的 PROM)
From old datasheet system
16K x 8 Power Switched andReprogrammable PROM
|
Cypress Semiconductor Corp.
|
| S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G |
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56
MirrorBit Flash Family MirrorBit闪存系列
Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22D SKT PLUG
|
Spansion, Inc.
Spansion Inc.
ETC
|
| AT49F002N-90JC AT49F002NT-70JL AT49F002NT-90JL AT4 |
256K X 8 FLASH 5V PROM, 70 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
256K X 8 FLASH 5V PROM, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
256K X 8 FLASH 5V PROM, 120 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
256K X 8 FLASH 5V PROM, 55 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
550NS,PDIP,IND TEMP,5.0V(FLASH) 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
聚兴科技股份有限公司
Atmel, Corp.
ATMEL CORP
|
| K8P3215UQB-PE4B0 K8P3215UQB-DI4A0 |
2M X 16 FLASH 2.7V PROM, 60 ns, PDSO48 20 X 12 MM, PLASTIC, TSOP1-48
2M X 16 FLASH 2.7V PROM, 55 ns, PBGA48 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
|
Analog Devices, Inc.
STMicroelectronics N.V.
|
| HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM)
Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24
Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp.
Intersil Corporation
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| PC28F256J3D-95 PC28F640J3D75A PC28F128J3D75B PC28F |
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64 LEAD FREE, ESBGA-64
4M X 16 FLASH 2.7V PROM, 75 ns, PBGA64
8M X 16 FLASH 2.7V PROM, 75 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
| CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32
128K X 8 FLASH 12V PROM, 70 ns, PQCC32
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
x8 Flash EEPROM x8闪存EEPROM
1 Megabit CMOS Boot Block Flash Memory
|
Ironwood Electronics
Atmel, Corp.
Rectron Semiconductor
http://
|
| MSM538022CRS MSM531031BGS-K |
1M X 8 MASK PROM, 100 ns, PDIP42
128K X 8 MASK PROM, 150 ns, PDSO32
|
OKI ELECTRIC INDUSTRY CO LTD
|
| HS1-6664RH/PROTO HS9-6664RH/PROTO HS-6664RH00 5962 |
8K x 8 CMOS PROM; Temperature Range: -; Package: 28-FlatPack 8K X 8 OTPROM, CDFP28
8K x 8 CMOS PROM; Temperature Range: -; Package: 28-SBDIP 8K X 8 OTPROM, CDIP28
Radiation Hardened 8K x 8 CMOS PROM
|
Intersil, Corp.
Intersil Corporation
|
|
